用于光谱解混的正交向量投影算法

光谱解混是高光谱技术中的关键部分,对地物成分的定量分析至关重要。线性光谱解混方法在计算端元丰度时,大多需要涉及矩阵求逆或方阵行列式的计算,导致软件实现的计算复杂度高,且硬件实现困难。同时,当端元数量增加时,算法的计算量也会随之呈指数级快速增长。论文基于传统的正交子空间投影方法,利用正交原理,提出了一种新的光谱解混方法——正交向量投影。该方法首先利用Gram-Schmidt过程计算每个端元的最终正交向量分量,并将其作为代表端元的投影向量。然后对于任意的待解混光谱向量,直接将其投影到该正交向量上。最后,计算得到投影分量的长度与正交向量的长度比,即为该正交向量所代表端元的无约束丰度。该过程避免了正交子空间投影和最小方差方法中计算复杂、实现困难的矩阵求逆运算,更便于并行计算的设计和硬件实现。通过理论的推导分析,证明了该算法与正交子空间投影和最小方差方法是完全一致的。另外,由于算法避免了矩阵相乘和求逆运算,简化了解混过程,通过对不同算法复杂度的具体分析,也证明该算法相对其他算法可以对端元数量降低一个量级。最后,在模拟数据和实际图像上分别进行实验测试,结果的分析和比较,也说明了算法的有效性。     

兰州反应显微成像谱仪实验中多路定标器的设计

介绍了一种基于PXI总线的高精度、多通道定标器。可测量脉冲信号的最高重复频率为100 MHz,最高计数可达240。定标器有2种工作模式:定时计数模式和精确触发测量模式。定时计数模式工作在低计数率下(s 1 MHz);精确触发测量模式可以工作在高计数率下(~ 100 MHz),可以满足兰州反应显微成像谱仪实验中对定标器的要求。基于可编程逻辑器件FPGA进行设计,使之变得灵活,方便进行升级和改造。This article introduces a high resolution and multi-channel scaler based on PXI-3U standard. The maximum repetition frequency of the input signal is 100 MHz, with a counting scale up to 240. This scaler is able to operate in two working modes: counting within a certain time period or between two adjacent input trigger signals. The rst mode is designed for a low counting rate (~ 1 MHz), while the second mode for a high rate ( 100 MHz). Test results indicate that this scaler has a good performance, beyond the application requirement in the experiment of the reaction microscope at Lanzhou (ReMiLa). Besides, with the application of Field Programmable Gate Array (FPGA), this scaler module is exible and convenient to be upgrade in future.     

TOT measurement implemented in FPGA TDC

Time measurement plays a crucial role for the purpose of particle identification in high energy physics experiments. With increasingly demanding physics goals and the development of electronics, modern time measurement systems need to meet the requirement of excellent resolution specification as well as high integrity. Based on Field Programmable Gate Arrays(FPGAs), FPGA time-to-digital converters(TDCs) have become one of the most mature and prominent time measurement methods in recent years. For correcting the time-walk effect caused by leading timing, a time-over-threshold(TOT) measurement should be added to the FPGA TDC. TOT can be obtained by measuring the interval between the signal leading and trailing edges. Unfortunately, a traditional TDC can recognize only one kind of signal edge, the leading or the trailing. Generally, to measure the interval, two TDC channels need to be used at the same time, one for leading, the other for trailing. However, this method unavoidably increases the amount of FPGA resources used and reduces the TDC's integrity.This paper presents one method of TOT measurement implemented in a Xilinx Virtex-5 FPGA. In this method,TOT measurement can be achieved using only one TDC input channel. The consumed resources and time resolution can both be guaranteed. Testing shows that this TDC can achieve resolution better than 15 ps for leading edge measurement and 37 ps for TOT measurement. Furthermore, the TDC measurement dead time is about two clock cycles, which makes it good for applications with higher physics event rates.     

Investigations on the charmless decays of Y(4260)

Apart from the charmful decay channels of Y(4260), the charmless decay channels of Y(4260) also provide us a good platform to study the nature and the decay mechanism of Y(4260). In this paper, we propose to probe the structure of Y(4260) through the charmless decays Y(4260)→VP via intermediate D₁D+c.c. meson loops, where V and P stand for light vector and pseudoscalar mesons, respectively. Under the molecule ansatz of Y(4260), the predicted total branching ratio BR_VP for all Y(4260)→VP processes are about (0.34_-0.23^+0.23)% to (0.75_-0.52^+0.72)% with the cutoff parameter α=2-3. Numerical results show that the intermediate m D₁D+c.c. meson loops may be a possible transition mechanism in the Y(4260)→VP decays. These predicted branching ratios are the same order to that of Y(4260)→Z_c⁺(3900)π^-, which may be an evidence of D₁D molecule and can be examined by the forthcoming BESⅢ data in the near future.     

Ni-Cu双金属催化剂上乙醇水蒸气重整制氢研究—制备方法对催化性能的影响

我们采用分步浸渍法和共浸渍法制备了一系列的Ni-Cu/mSiO₂催化剂.运用XRD、N₂吸附-脱附、H₂-TPR、SEM、TG-DTG等表征手段对催化剂反应前后的物理化学性质进行分析,催化剂对乙醇水蒸气重整（ESR）反应的催化性能通过常压固定床反应器进行评价.结果表明：催化剂的催化性能与载体上的活性组分分散有关,而活性金属的分散性与制备方法有关.共浸渍法制备的催化剂Ni₁₄-Cu/mSiO₂活性组分分散度较高,抗积碳能力与稳定性更好.在质量空速为2.7 h^-1,水醇摩尔比为9,反应温度为550℃的条件下进行稳定性测试,催化剂Ni₁₄-Cu/mSiO₂测试25 h没有出现失活现象,乙醇转化率保持在100%,H₂的选择性保持在70%以上,反应后的积碳含量仅为5.52%.     

Numerical Complexiton Solutions of Complex KdV Equation

In this paper, we directly extend the applications of the Adomian decomposition method to investigate the complex KdV equation. By choosing different forms of wave functions as the initial values, three new types of realistic numerical solutions： numerical positon, negaton solution, and particularly the numerical analytical complexiton solution are obtained, which can rapidly converge to the exact ones obtained by Lou et al. Numerical simulation figures are used to illustrate the efficiency and accuracy of the proposed method.     

磷酸氢二钾催化多组分一锅法反应合成1,4-二氢吡喃并[2,3-c]吡唑衍生物

绿色、简便、高效的催化四组分反应合成吡喃并[2,3-c]吡唑类杂环化合物是当今有机化学领域的研究热点。 本文发展了在水与聚乙二醇(PEG-200)的混合液中,廉价易得的磷酸氢二钾(K₂HPO₄·3H₂O)催化乙酰乙酸乙酯、水合肼、芳香醛和丙二腈的多组分“一锅法”反应,合成一系列1,4-二氢吡喃并[2,3-c]吡唑-5-腈衍生物,产率为88%~98%。 该方法避免了使用复杂昂贵的催化剂和繁琐的纯化过程。     

货运动车组装载门凹陷对隧道内会车压力波的影响

随着我国技术经济水平的提高,电子商务产业快速发展,货运动车组应运而生。采用有限体积方法和重叠网格方法,以及SST k-ω高雷诺数湍流模型,数值模拟研究时速350 km的货运动车组在隧道内交会的压力波,探究货运动车组车体结构即装载门凹陷对隧道内交会压力波的影响。实车试验结果验证了本文数值模拟方法的准确性。研究结果表明,凹陷的装载门使平直车身处的最大正压值增大约20%~30%,且有无凹陷的装载门中心最大正压值的差异百分比维持在35%~80%,最大负压值差异百分比在20%~25%。     

超薄金壳包覆NaYF4:Yb,Er@SiO2纳米结构的可控合成与表面增强上转换荧光

利用原位还原法成功制备了尺寸均一、超薄完整金壳包覆的NaYF₄:Yb,Er@SiO₂@Au（NSA）纳米结构,其XRD、TEM、EDX、HRTEM-HAADF、Mapping及吸收光谱表征结果表明,SiO₂壳及纳米金壳的平均厚度分别约为5 nm和2 nm。在980 nm连续激光激发下,系统研究了核壳结构的上转换荧光强度与氯金酸浓度的依赖关系。稳态光谱结果显示,NSA与仅SiO₂包覆样品（NS）相比Er³⁺的红绿荧光强度均增强了~2.8倍。通过分析上转换荧光动力学过程及利用FDTD方法模拟,讨论了表面等离激元增强上转换荧光的机制。     

不同构型(In,Al)GaN合金发光机理的第一性原理研究

基于第一性原理的密度泛函理论,研究了纤锌矿（In,Al）GaN合金的4种构型（均匀、短链、小团簇、团簇-链共存模型）的电子结构和发光微观机理。结果表明,在InGaN合金中,短In-N-链和小In-N团簇都局域电子在价带顶（VBM）态。当小团簇与短链共存时,前者局域电子的能力明显强于后者,是辐射复合发光中心。然而,在AlGaN合金中,电子在VBM态的局域受短Al-N链和小Al-N团簇的影响并不显著。合金微观结构的不同会引起电子局域的改变,从而影响材料的发光性能,并对带隙和弯曲系数有重要影响。